| 摘要 |
PROBLEM TO BE SOLVED: To provide a bipolar transistor having excellent gain characteristic and its manufacturing method by reducing a parasitic capacitance Cre between a base wiring electrode and a collector substrate while restraining the increase of an emitter capacitance. SOLUTION: In this bipolar transistor, base electrode wirings 7, 7A and a dummy electrode 7B which is positioned just under the electrode wirings and electrically connected with no portions by interposing insulating films 2, 3 to a collector substrate 1. The transistor is mounted on a package frame having at least two emitter pins 11a, 11b, and formed in such a manner that the potential of the dummy electrode 7B becomes identical to that of an emitter electrode 8A for the first time.
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