Formation of single-crystal thin SiC films

摘要

Thin, single-crystal SiC films are obtained by means of a pyrolysis process, the substrate to be coated being covered with a carbonaceous polysilane, the adhering layer being pyrolyzed in an inert atmosphere and the amorphous layer of SiC obtained in this way being crystallized by maintaining it at a temperature of over 700 DEG C. Using a special variation of the process, it is easy to form doped SiC films. To this end the dopant is added in the form of a silane compound.