发明名称 |
Memory cell with a Frohmann-Bentchkowsky EPROM memory transistor that reduces the voltage across an unprogrammed memory transistor during a read |
摘要 |
The unintentional programming of a memory cell having a Frohmann-Bentchkowsky p-channel memory transistor and an n-channel MOS access transistor, which can occur during a read operation when high read voltages are used, is eliminated by forming a diode-connected MOS transistor in parallel with the access transistor. The diode-connected transistor is formed to be off when an unprogrammed memory transistor is read, and to be on when a programmed memory transistor is read.
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申请公布号 |
US6118691(A) |
申请公布日期 |
2000.09.12 |
申请号 |
US19990374001 |
申请日期 |
1999.08.13 |
申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
KALNITSKY, ALEXANDER;DERMAN, ITAI;MEYASSED, MOSHE |
分类号 |
G11C11/56;G11C16/04;G11C16/10;G11C16/26;H01L27/115;H01L29/788;(IPC1-7):G11C16/04 |
主分类号 |
G11C11/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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