METHOD AND APPARATUS FOR IONIZED PHYSICAL VAPOR DEPOSITION

摘要

Ionized physical vapor deposition (IPVD) is provided by a method of apparatus (10) for sputtering coating material from a compound sputtering source (20) formed of an annular ring shaped target (21) with a circular target (31) at its center, increasing deposition rate and coating uniformity. Each target (21, 31) is separately energized to facilitate control of the distribution of material sputtered into the chamber (11) and the uniformity of the deposited film. The sputtered material from the targets (21, 31) is ionized in a processing space between the target and a substrate (18) by generating a dense plasma in the space with energy coupled from a coil (65) located outside of the vacuum chamber (11) behind an annular dielectric window (61) in the chamber wall (12) in the central opening of the annular target and surrounding the circular target. A Faraday type shield (66) physically shields the window to prevent coating material from coating the window, while allowing the inductive coupling of energy from the coil into the processing space.