| 摘要 |
PROBLEM TO BE SOLVED: To provide a structure of semiconductor device, in which self conductance and transconductance of wire are reduced and a manufacturing method thereof. SOLUTION: Au wires 4a, 4b are connected with an electrode pad 3 on a semiconductor element 2 formed on a substrate 1. The wires 4a, 4b are connected, at the other end thereof, with a wiring part of same potential formed on the substrate 1. A conductive film 5 of Au is formed between the wires 4a, 4b. An insulation film 6 made of polyimide is formed on the semiconductor element 2, while abutting on the electrode pad 3 and an insulation film of SiO2 is formed on the substrate 1. |
