Plasma processing tools, dual-source plasma etchers, dual-source plasma etching methods, and methods of forming planar coil dual-source plasma etchers

摘要

Plasma processing tools, dual-source plasma etchers, and etching methods are described. In one embodiment, a processing chamber is provided having an interior base and an interior sidewall joined with the base. A generally planar inductive source is mounted proximate the chamber. A dielectric liner is disposed within the chamber over the interior sidewall with the liner being received over less than an entirety of the interior sidewall. In a preferred embodiment, the interior sidewall has a groundable portion and the dielectric liner has a passageway positioned to expose the groundable interior sidewall portion. Subsequently, a plasma developed within the chamber is disposed along a grounding path which extends to the exposed interior sidewall. In another preferred embodiment, the dielectric liner is removably mounted within the processing chamber.