Polysilicon gate electrode critical dimension and drive current control in MOS transistor fabrication

摘要

A method is provided for controlling the critical dimensions of a polysilicon gate electrode, and for improving transistor drive current control. The method involves subjecting the gate structure of a transistor to a thermal treatment process in the presence of hydrogen gas. The thermal treatment process is performed subsequent to gate etching and photoresist mask removal, and provides gate electrodes having a more homogeneous linewidth, thereby improving transistor performance.