ETCHING APPARATUS USED IN POLISHING PROCESS OF CONTACT PLUG, CONDUCTIVE WIRING, OR INSULATED FILM

摘要

PURPOSE: An etching apparatus is to solve a problem treating waste solution produced at CMP(Chemical Mechanical Polishing) process. CONSTITUTION: An electrode(20) and a power source electrode(30) are positioned on a side of a wafer(40), so that an electric field is produced in a horizontal direction to a surface of the wafer. The electrodes are movable in a vertical or horizontal direction depending upon a process condition to shift the direction of the electric field. Many reactive chemicals enter into at a desired angle along the direction of the electrical field or the surface of the wafer. A wafer supporting frame(60) is rotatable and movable up and down to improve a uniform degree of etching across the surface of the wafer. A reactive gas is inserted toward a front of the wafer or a power source.