发明名称 Self-aligned metal nitride for copper passivation
摘要 A method of fabricating metallization. A metal nitride layer is formed on the exposed surface of the metal layer. The metal nitride layer is used as a barrier layer to prevent short circuit, which is produced by metal diffusing into the inter-metal dielectrics. Therefore, the reliability of devices can be improved.
申请公布号 US6114238(A) 申请公布日期 2000.09.05
申请号 US19980082388 申请日期 1998.05.20
申请人 UNITED SILICON INCORPORATED 发明人 LIAO, KUAN-YANG
分类号 H01L21/768;(IPC1-7):H01L21/476 主分类号 H01L21/768
代理机构 代理人
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