发明名称 |
Self-aligned metal nitride for copper passivation |
摘要 |
A method of fabricating metallization. A metal nitride layer is formed on the exposed surface of the metal layer. The metal nitride layer is used as a barrier layer to prevent short circuit, which is produced by metal diffusing into the inter-metal dielectrics. Therefore, the reliability of devices can be improved.
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申请公布号 |
US6114238(A) |
申请公布日期 |
2000.09.05 |
申请号 |
US19980082388 |
申请日期 |
1998.05.20 |
申请人 |
UNITED SILICON INCORPORATED |
发明人 |
LIAO, KUAN-YANG |
分类号 |
H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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