SEMICONDUCTOR DEVICE MANUFACTURE METHOD

摘要

PURPOSE: A method for manufacturing semiconductor devices is provided to prevent location of an N type dopant between an N well region and a P channel field stop implant region and decrease in the concentration using As ions being an N type dopant upon formation of a profiled N well region. CONSTITUTION: A method for manufacturing semiconductor devices forms a field oxide film for device separation on a semiconductor substrate. A profiled N well region sequentially having an N well implant region(56) and a P channel field stop implant region(58) is formed at a location where an N well region will be formed in the semiconductor substrate, using an ion implanter. A profiled P well region sequentially having a P well implant region(62), a medium P well implant region(64) and an N channel field stop implant region(66) is formed at a location where a P well region will be formed in the semiconductor substrate, using the ion implanter. The entire surface of the structure is experienced by thermal process to activate the profiled N well region and the profiled P well region.