METHOD FOR FORMING NANO PATTERN OF SEMICONDUCTOR

摘要

PURPOSE: A method for forming a fine pattern of a nano unit in a semiconductor device is provided to form a fine pattern in a nano unit necessary for a manufacturing process of a single electronic transistor. CONSTITUTION: The first and the second buffer layers(21,22) with different etching speeds are formed on a substrate(20). A dummy layer(23) is formed on the second buffer layer(22). The first groove is formed by etching selectively the dummy layer(23). A dummy layer spacer(24) is formed at a sidewall of the first groove. The second groove is formed by etching the second and the first buffer layers(22,21). The dummy layer(23) and the dummy layer spacer(24) are removed. The third groove is formed by forming a buffer layer spacer at a sidewall of the second groove. A fine pattern material layer is formed on an upper portion of the whole structure. The fine pattern material layer remains within the third groove by etching the fine pattern material layer.