发明名称 FIELD-ASSISTED PHOTO EMISSION DIODE
摘要 <p>A method and apparatus are provided for detecting photonic emissions. The apparatus (10) includes a field assisted photodetector which contains a light-absorbing relatively thin metallic region (16) adapted to form a photoemitter layer (11, 16) which emits photoelectrons in response to infrared light. The photodetector also includes a semiconductor layer (12) disposed against the photoemitter layer (11, 16) and adapted to form a blocking contact to photoelectron flow through an interface between the semiconductor layer (12) and metallic layer (16). The photodetector further includes a power supply adapted to induce internal field emission of the photoelectrons through the blocking contact.</p>
申请公布号 WO2000051189(A1) 申请公布日期 2000.08.31
申请号 US2000004569 申请日期 2000.02.23
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