发明名称 EXPOSURE PATTERN CORRECTION METHOD, EXPOSURE METHOD, ALIGNER, PHOTOMASK AND SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To simplify operation and data processing required for correcting a light proximity effect of a light shield film pattern. SOLUTION: A serif figure 37 related to a light shield film pattern 35 constituting a layout-designed exposure pattern is formed. The light shield film pattern 35 and the serif figure 37 are figure-operated, and the light shield film pattern 35 is corrected, and the light proximity effect at the time of exposing by this light shield pattern 35 is corrected. Then, the operation processing required for correcting the light proximity effect for the light shield film pattern 35 is simplified, and the processing time required for correcting the light proximity effect is shortened.
申请公布号 JP2000235251(A) 申请公布日期 2000.08.29
申请号 JP19990037904 申请日期 1999.02.16
申请人 SONY CORP 发明人 ONUMA EIJU
分类号 H01L21/027;G03F1/36 主分类号 H01L21/027
代理机构 代理人
主权项
地址