发明名称 |
Formulation of high performance transistors using gate trim etch process |
摘要 |
The present invention is directed to a new and improved technique for formation of metal oxide semiconductor field effect transistors. In particular, the method involves formation of an initial gate structure that is wider than the desired final channel length of the completed transistor. Thereafter, an initial heavy-doping step is applied to the drain and source regions of the device. The width of the gate structure is then patterned and etched back to the desired final channel length of the device. A second, light-doping LDD implant is performed to complete the source and drain regions of the finished device.
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申请公布号 |
US6110785(A) |
申请公布日期 |
2000.08.29 |
申请号 |
US19980069533 |
申请日期 |
1998.04.29 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
SPIKES, JR., THOMAS E.;GARDNER, MARK I.;TOPRAC, ANTHONY J. |
分类号 |
H01L21/336;H01L29/78;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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