| 摘要 |
PROBLEM TO BE SOLVED: To obtain an ITO sintered compact while easily controlling the optimum concentration of oxygen at which the minimum electrical resistance is ensured even in a sputtering method in which the formation of nodules is inhibited, the generation of particle of In is reduced and high reactivity with oxygen is assured. SOLUTION: The ITO sintered compact consists essentially of In, Sn and O, has >=7.08 g/cm3 sintered density and 80-100 μΩcm bulk resistivity and satisfies O/(In+Sn+O)<=17.5% (weight ratio). The integral intensity of the X-ray diffraction peak of the (220) face of an In4Sn3O12 phase in the sintered compact is <=30% of that of the (211) face of an In2O3 phase. The sintered compact is obtained by changing over a sintering atmosphere from an oxidizing atmosphere to a nonoxidizing atmosphere at the time when >=1,400 deg.C sintering temperature is attained in the sintering of a compact consisting of In, Sn and O. |
