| 摘要 |
PURPOSE: A contact structure manufactured by a photolithography process is provided to satisfy test requirement of a next generation semiconductor technique by having a high frequency bandwidth, and to avoid a positional error by making many contact structures without a manual operation. CONSTITUTION: A contact structure(30) manufactured by a photolithography process comprises a silicon substrate(40), an insulation layer, and a conductive layer(35). The silicon substrate has an inclined supporting part formed by an anisotropic etching process. The insulation layer is protruded from the inclined supporting part, formed on the silicon substrate. The conductive layer is formed with a conductive material on the insulation layer, in which a beam part is formed by the insulation layer and the conductive layer, and forms an elastic force in the Y-axis direction of the beam part when a tip of the beam part presses a contact target(320).
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