| 摘要 |
PURPOSE: A method for manufacturing a contact or wiring in a semiconductor device is provided to form a shallow contact hole and a deep contact hole by using one photolithography process. CONSTITUTION: A method for manufacturing a contact or wiring in a semiconductor device comprises the steps of: forming an interlayer dielectric on a semiconductor substrate; forming a first insulation layer on the interlayer dielectric; and applying resist on the first insulation layer and patterning the resist, so as to form a first opening and a second opening in regions for forming a contact hole and a wiring groove respectively. The diameter of the first opening formed in the region for forming the contact hole is greater than that of the second opening.
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