| 摘要 |
<p>An electrode for a semiconductor device which can be excellently die-bonded or wire-bonded to a sub-mount, wherein the electrode is formed on a semiconductor in ohmic contact therewith and comprises an underlying layer electrode (E1) formed on the semiconductor in a layered structure and an overlying layer electrode (E2) covering the top and/or side surface of the underlying layer electrode (E1), and the overlying layer electrode is formed by a vapor deposition device or a sputtering device which has a holder tilted with respect to the electrode material and capable of rotating and revolving.</p> |
