METHOD AND APPARATUS FOR CHEMICAL VAPOR DEPOSITION OF POLYSILICON

摘要

A method and apparatus for the production of bulk polysilicon by broad area chemical vapor deposition, consisting of a quartz envelope (31) and base plate (34) forming a reactor enclosure, with external radiant heaters (33) providing the heat source. A thin wall, edge-defined film fed growth (EFG) silicon tube section (32) is used as the deposition casing and reaction chamber wall. The tube is capped at the top and sealed to the base plate (34) to form the reaction chamber.