发明名称 |
Broadband tunable semiconductor laser source |
摘要 |
A tunable semiconductor laser comprises a gain section having an MQW active region, a uniform pitch grating DFB region, and first waveguide. A composite reflector, including a second MQW region and a second waveguide, forms a cavity resonator with the DFB region. A voltage applied to the composite reflector induces a quantum confined stark effect, thereby allowing the wavelength to be altered. In one embodiment, the current drive to the active region and the shape of the first waveguide (e.g., a raised-sine function) are mutually adapted so that N longitudinal modes have essentially the same threshold gain and so that the DFB region spanned by the first waveguide is segmented into N zones, each zone providing optical feedback at a different wavelength corresponding to a different longitudinal mode.
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申请公布号 |
US6108362(A) |
申请公布日期 |
2000.08.22 |
申请号 |
US19970954305 |
申请日期 |
1997.10.17 |
申请人 |
LUCENT TECHNOLOGIES INC. |
发明人 |
ADAMS, LAURA ELLEN;BETHEA, CLYDE GEORGE;FANG, WEI-CHIAO;NYKOLAK, GERALD;PEOPLE, ROOSEVELT;SERGENT, ARTHUR MIKE;TANBUN-EK, TAWEE;TSANG, WON-TIEN |
分类号 |
H01S3/10;H01S5/0625;H01S5/10;(IPC1-7):H01S5/00;H01S3/08 |
主分类号 |
H01S3/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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