发明名称 |
Metal-semiconductor-metal photodetector |
摘要 |
A metal-semiconductor-metal photodetector including an absorbent layer, a barrier layer of greater forbidden band energy on which there are deposited Schottky electrodes and a transition layer of graded composition, the photodetector including a doping plane situated in the vicinity of the join between the absorbent layer and the transition layer of graded composition.
|
申请公布号 |
US6107652(A) |
申请公布日期 |
2000.08.22 |
申请号 |
US19980008276 |
申请日期 |
1998.01.16 |
申请人 |
FRANCE TELECOM |
发明人 |
SCAVENNEC, ANDRE;TEMMAR, ABDELKADER |
分类号 |
H01L31/108;(IPC1-7):H01L31/072;H01L31/032;H01L31/033;H01L31/109 |
主分类号 |
H01L31/108 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|