METHOD FOR FABRICATING TFT FOR LCD

摘要

PURPOSE: A method for fabricating a TFT for a LCD is provided to form an LDD(Lightly doped drain) or an offset so that the right and left are symmetrized, thereby being uniform an operation characteristics of the TFT. CONSTITUTION: A gate electrode(210) is formed on a transparent insulating substrate. A gate insulating film is formed on the gate electrode. A semiconductor layer is formed on the gate insulating film. First and second shielding films(61,62) are sequentially formed on the semiconductor layer. The first and second shielding films are patterned through a back side exposure. An impurity of a high density is doped in the semiconductor layer using the first and second shielding films as an implanting mask. The first shielding film is isotropically etched so that the width of the first shielding film becomes narrower than that of the second shielding film. The second shielding film is removed. An impurity of a low density is doped in the semiconductor layer using the first shielding film as an implanting mask.