ETCHING METHOD OF ETCH STOPPING LAYER OF SELF-ALIGNED CONTACT

摘要

PURPOSE: A method for etching an etch stopping layer of a self-aligned contact is to reduce a contact resistance and to improve a refresh characteristics of a device. CONSTITUTION: An etching method of an etch stopping layer of a self-aligned contact comprises the steps of: including a conductive layer pattern(8) covered with a first substance layer(10,12) on a semiconductor substrate(2); and etching an interlayer insulation layer(16) between the neighboring conductive layer pattern, and a second substance layer(14) formed under the insulation layer so as to form a contact hole, the second substance layer being an etch stopping layer when the interlayer insulation layer is etched using a down stream chamber.