发明名称 APPARATUS FOR CLEANING WIPER OF CHEMICAL MECHANICAL POLISHING FACILITIES
摘要 PURPOSE: An apparatus for cleaning a wiper of chemical mechanical polishing(CMP) facilities is provided to reduce a manufacturing cost, by protecting a wafer from a particle remaining in a wiper sponge, so that the wiper sponge can be used longer. CONSTITUTION: An apparatus(100) for cleaning a wiper(102) of chemical mechanical polishing(CMP) facilities comprises a supplying element(112) for supplying inert gas to a cleaning bath(106), in which the wiper can be more effectively cleaned with cleaning solution(108) and inert gas bubble(110) by supplying the cleaning solution and the inert gas to the cleaning bath to generate the inert gas bubble in the cleaning solution.
申请公布号 KR20000051681(A) 申请公布日期 2000.08.16
申请号 KR19990002253 申请日期 1999.01.25
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 MUN, JIN OK;SONG, JU HEON
分类号 H01L21/304;(IPC1-7):H01L21/304 主分类号 H01L21/304
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