发明名称 |
Method to manufacture dual damascene structures by utilizing short resist spacers |
摘要 |
A method of manufacturing semiconductor devices wherein a partially completed semiconductor device having a first and second layer of interlayer dielectric and a first and second etch stop layer has the second etch stop layer masked and etched with an etch pattern having dimensions of the trench structure to be formed in the second interlayer dielectric. The second layer dielectric and first etch stop layer are then masked and etched with an etch pattern having dimensions of the via structure to be formed in the first interlayer dielectric. The remaining portions of the photoresist is removed and exposed portions of the second layer of interlayer dielectric and the first layer of interlayer dielectric are then etched simultaneously. The via structure and trench structure are then simultaneously filled with a conductive material.
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申请公布号 |
US6103616(A) |
申请公布日期 |
2000.08.15 |
申请号 |
US19980136867 |
申请日期 |
1998.08.19 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
YU, ALLEN S.;SCHOLER, THOMAS C.;STEFFAN, PAUL J. |
分类号 |
H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/768 |
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地址 |
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