发明名称 Semiconductor pressure sensor including a resistive element which compensates for the effects of temperature on a reference voltage and a pressure sensor
摘要 A semiconductor pressure sensor includes a substrate with a semiconductor pressure detecting element mounted thereon. The pressure detecting element includes a pressure detector, having two terminals, which generates a small potential difference between the two terminals in proportion to a pressure applied to the pressure sensor, and a peripheral circuit for differential amplification of the small potential difference based on a reference voltage applied thereto. Reference voltage setting resistors are used to set the reference voltage to a predetermined value. Also, temperature compensating resistors compensate for an error produced in the pressure detector as a result of change in temperature and an error caused in the peripheral by a change of the reference voltage resulting from the change in temperature, respectively.
申请公布号 US6101883(A) 申请公布日期 2000.08.15
申请号 US19970927201 申请日期 1997.09.11
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 TAKEUCHI, TAKANOBU
分类号 G01L1/18;G01L1/22;G01L9/06;H01L29/84;(IPC1-7):G01L9/00;G01L9/16 主分类号 G01L1/18
代理机构 代理人
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