| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride-based semiconductor laser device which is excellent in the reproducibility of a process, which can be operated at a low threshold value, at a low operating voltage and with high reliability, and whose characteristic is good. SOLUTION: In this nitride-based semiconductor laser device, a multiple quantum well structure 16 which is composed of AlxGa1-xN/AlyGa1-yN (0<x<=1 and 0<=y<1) constituted on a substrate 11 or a superlattice structure is provided. The nitride-based semiconductor laser device is formed in such a way that its A composition is not uniform but step-shaped or graded in a part or all of AlxGa1-xN layers as barrier layers, or in the AlyGa1-yN layer to be used as a well-side layer.
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