| 发明名称 |
Method for rapid thermal processing (RTP) of silicon substrates |
| 摘要 |
A method of rapid thermal processing (RTP) of a silicon substrate is presented, where a very low partial pressure of reactive gas is used to control etching and growth of oxides on the silicon surface.
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| 申请公布号 |
US6100149(A) |
申请公布日期 |
2000.08.08 |
| 申请号 |
US19970886215 |
申请日期 |
1997.07.01 |
| 申请人 |
STEAG RTP SYSTEMS |
发明人 |
NENYEI, ZSOLT;LERCH, WILFRIED;SOMMER, HELMUT |
| 分类号 |
H01L21/26;H01L21/28;H01L21/324;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/26 |
| 代理机构 |
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