| 摘要 |
A method of manufacturing a Al-Cu line stack comprised of Ti-rich TIN, TiN, Ti-rich TiN, Al-Cu, Ti-rich TiN, TiN layers. A key feature of the invention is the sputtering of the Ti-rich TiN layers and TiN layers in the same Ti sputter chamber by turning off and on the N2 gas flow. For example, the Ti-rich TiN layer is formed by sputtering Ti with the N2 gas initially turned off. The overlying TiN layer is sputtered with the N2 gas turned on and the process stabilizes. The Ti-rich TiN layer is sputtered during a N2 off step (no N2 gas flow). The invention's Ti-rich TiN, TiN, Ti-rich TiN, Al-Cu, Ti-rich TiN, TiN layers increase the electromigration resistance.
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