发明名称 |
Low voltage-drop electrical contact for gallium (aluminum, indium) nitride |
摘要 |
An electrical contact that comprises a layer of a p-type gallium nitride material, a metal layer, and an intermediate layer of a material different from the gallium nitride material and the metal layer. The intermediate layer is sandwiched between the layer of p-type gallium nitride material and the metal layer. The material of the intermediate layer may be a Group III-V semiconductor that has high band-gap energy, lower than that of the p-type gallium nitride material. The intermediate layer may alternatively include layers of different Group III-V semiconductors. The layers of the different Group III-V semiconductors are arranged in order of their band-gap energies, with the Group III-V semiconductor having the highest band-gap energy next to the layer of the p-type gallium nitride material, and the Group III-V semiconductor having the lowest band-gap energy next to the metal layer. As a further alternative, the material of the intermediate layer may be a metal nitride. As a yet further alternative, the material of the intermediate layer may be a gallium nitride material in which a percentage of the nitrogen atoms are replaced by a mole fraction x of atoms of at least one other Group V element. The value of x is close to zero next to the p-type gallium nitride material, and is substantially greater next to the metal layer. This intermediate layer may alternatively be sandwiched between a layer of n-type gallium nitride material and a metal layer to make an n-contact.
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申请公布号 |
US6100586(A) |
申请公布日期 |
2000.08.08 |
申请号 |
US19970862461 |
申请日期 |
1997.05.23 |
申请人 |
AGILENT TECHNOLOGIES, INC. |
发明人 |
CHEN, YONG;YANG, LONG;WANG, SHIH-YUAN;SCHNEIDER, RICHARD P. |
分类号 |
H01S5/00;H01L29/45;H01L33/10;H01L33/32;H01L33/40;H01S5/042;H01S5/323;(IPC1-7):H01L21/28 |
主分类号 |
H01S5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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