ELECTRO-OPTIC DEVICE, DRIVING SUBSTRATE FOR ELECTRO-OPTIC DEVICE, AND PRODUCTION OF THE SAME

摘要

PROBLEM TO BE SOLVED: To obtain an electro-optic device using an active matrix substrate housing a high-performance driver by growing crystalizingly a single crystal semiconductor layer from a material layer as a seed and subjecting the semiconductor layer to specified treatment to form bottom gate-type thin film transistors in a peripheral driving circuit. SOLUTION: After a photoresist 2 is removed, a crystalline sapphire film 50 is formed in a TFT forming region including steps 4 on the principal plane of an insulating substrate 1. Then, a silicon tin molten liquid is applied by spin coating or the like to all over the crystalline sapphire film 50 to form a molten liquid layer 6. The insulating substrate 1 is gradually cooled to grow the crystal of silicon dissolved in tin from the crystalline sapphire film 50 as a seed to crystallize single crystal silicon to form a single crystal silicon layer 7. The single crystal semiconductor layer 7 is subjected to a specified treatment to form first bottom gate-type thin film transistors in the peripheral driving circuit.