| 摘要 |
PROBLEM TO BE SOLVED: To obtain an Al wiring which can suppress a battery reaction with indium tin oxide(ITO) to avoid hillock growth. SOLUTION: An Al wiring is obtained by subjecting a multi-filmed Al layer made up of an Al film 2a of pure Al and an AlOx film 2b formed on the film 2a and made of Al containing oxygen elements to a photolithograpical patterning process. The AlOx 2b can be formed by using Al as a target material and using an Ar as a sputtering gas, or by using a target made of Al containing oxygen atoms.
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