| 摘要 |
PROBLEM TO BE SOLVED: To obtain a large crystal grain or a single crystalline region by forming a non-single crystal semiconductor thin film such as an amorphous or polycrystalline semiconductor thin film on a non-single crystal insulating film or a non-single crystal insulating substrate and applying energy such as heat, light or charged particle to a part of the non-single crystal semiconductor thin film. SOLUTION: Regular unevenness is formed on a part of the surface of a non-single crystal insulating film or a non-single crystal insulating substrate 1. A non-single crystal semiconductor thin film 2 such as an amorphous semiconductor thin film or a polycrystalline semiconductor thin film is formed on the part. A part between a nucleus forming region (unevenness forming side) and a region required to form a large crystal is removed to form a necking part 4. Only a crystal nucleus as a seed crystal which is passed through the necking part, is grown and is readily to subjected to crystal growth is subjected to crystal growth to prevent the obstruction of mutual crystal growth caused by mutual collision of irregularly generated crystal grains. Energy such as heat, light or charged particle is applied to a part of the non-single crystal semiconductor thin film 2, a localization state of temperature in a plane is formed and the heating part is moved in the plane to control the generation zone and the crystal growth direction of crystal nucleus.
|
