| 摘要 |
PURPOSE: A method for manufacturing a thin film actuated mirror array is to recover the defected part of an active substrate by forming an actuator on the rear surface of the active substrate. CONSTITUTION: A field oxide layer(520) is formed to define an active region by oxidizing a predetermined part of an insulating substrate(510). A MOS transistor is formed on the active region defined by the field oxide layer. The MOS transistor includes a gate oxide layer(530a), a gate electrode(530b), an interlayer dielectric(530c), a source region(530d), and a drain region(530e). A metal layer(540) includes a source line(540a) electrically connected to the source region and a drain pad(540b) electrically connected to the drain region. An active substrate(560) is formed by depositing a passivation layer on the metal layer. After rotating the active substrate by 180 degrees in a clockwise direction, a sacrificial material layer is formed on the rear surface of the active substrate.
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