发明名称 |
Method for forming a refractory metal silicide layer |
摘要 |
A method for forming a refractory metal silicide layer on a silicon surface in which a first layer of a refractory metal is formed on the silicon surface. A second layer extends over the first layer and is made of a nitrogen containing refractory metal. The silicon surface and the first and second layers are subjected to a heat treatment in an argon gas atmosphere to form a refractory metal silicide layer on an interface between the silicon surface and the first layer.
|
申请公布号 |
US6096638(A) |
申请公布日期 |
2000.08.01 |
申请号 |
US19960742595 |
申请日期 |
1996.10.28 |
申请人 |
NEC CORPORATION |
发明人 |
MATSUBARA, YOSHIHISA |
分类号 |
H01L21/28;H01L21/285;H01L21/336;(IPC1-7):H01L21/476;H01L21/44 |
主分类号 |
H01L21/28 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|