| 摘要 |
PROBLEM TO BE SOLVED: To enhance cleaning power by employing a cleaning liquid for semiconductor substrate composed of ammonia, hydrogen peroxide and ultrapure water and specifying the relationship between the processing temperature, processing time and the mol concentration ratio between ammonia and hydrogen peroxide thereby suppressing roughness on the surface of the substrate. SOLUTION: A cleaning liquid for semiconductor substrate is composed of ammonia, hydrogen peroxide and ultrapure water wherein the processing temperature (T (unit: K and processing time (t (unit: min)) of the semiconductor substrate and the mol concentration ratio (R) between ammonia and hydrogen peroxide satisfy the processing conditions shown by formula I, the mol concentration ratio of ammonia is 10 mol/l or less and the mol concentration of hydrogen peroxide C(H2O2) satisfied the processing conditions shown by formula II. Furthermore, the processing temperature and processing time for the semiconductor substrate and the mol concentration ratio between ammonia and hydrogen peroxide in the cleaning liquid may satisfy the processing conditions shown by formula III.
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