| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device with which making of contact holes and embedding thereof is facilitated, a contact made to be of low resistance, and a first layer metal wiring be made larger in film thickness. SOLUTION: A first layer metal contact and a groove contact for reducing the resistance of diffusion layer is made open, prior to formation of a capacitor 7 for storage, and the contacts are embedded with a silicon oxide film 4 and a high density thin film 5 formed thereon. After the formation of the capacitor 7 for storage, the contact is made reopened and are embedded with a first layer metal. |
