Improvements in or relating to semiconductor devices

摘要

A method and apparatus (50) double the memory capacity of a single-package semiconductor memory device (10) using a bump bonding process applied to mirror imaged chips. The method includes and resulting apparatus results from the steps of forming a first chip (10) comprising a first set of pads (12) according to a predetermined set of masks (20). Generating a set of mirror-imaged masks (24) comprising a mirror image of the predetermined set of masks (20) is a next step of the present method. Then, the invention includes forming a second chip (30) comprising a second set of pads (32) according to the set of mirror-imaged masks (24). Connecting the first chip (10) and the second chip (30) to a single package lead frame (40) can then occur such that the first chip (10) and the second chip (30) face opposite sides of the single package lead frame (40) for functionally equivalent ones of the first set of pins (12) and the second set of pins (32) to share a common lead of said single package lead frame (40). Control circuitry (60) selectively controls whether single packaged semiconductor memory device (50) provides single capacity or double capacity operation.