| 摘要 |
PURPOSE: A semiconductor integrated circuit apparatus and method for manufacturing the same are provided to increase a refresh characteristics of the semiconductor integrated circuit apparatus and a driving capability of the MIS transistor of a logic circuit. CONSTITUTION: A semiconductor integrated circuit apparatus includes a memory cell in which a MIS transistor and a capacity device are connected in series on a semiconductor substrate(1). An active region and a device separating region(4) are provided on the surface of the semiconductor substrate. The MIS transistor is formed to the active region and provides a semiconductor region(5a,8a,8b) for a gate electrode(5g,8g) and a source/drain. A conductive type of the semiconductor region for the source/drain is contrary to a conductive type for the gate electrode. The device separating region is formed by filling a separating groove(4a), which is formed on the surface of the semiconductor substrate, with an insulating film. A gate insulating film(5i) is formed on the semiconductor substrate. A polysilicon film is deposited on the gate insulating. A conductive type impurity contrary to the conductive type for the source/drain is introduced to a region for forming the gate electrode of the MIS transistor in the polysilicon film.
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