METHOD FOR FORMING BARRIER OXIDE OF CAPACITOR

摘要

PURPOSE: A method for forming a barrier oxide of a capacitor is provided to prevent a silicon nitride layer from being destroyed as well as to improve leakage current. CONSTITUTION: A method for forming a barrier oxide of a capacitor according to the present invention includes following steps. At the first step, a lower charge storage electrode(15) as well as a silicon nitride layer(20) are formed on a semiconductor substrate. At the second step, hydrogen gas and oxygen gas are supplied on the silicon nitride layer to oxidate the surface of the silicon nitride layer. At the third step, the silicon nitride layer is oxidated in an oxygen gas atmosphere to form a barrier oxide(25) layer on the silicon nitride layer. The oxidation process is perform in the temperature range of 600 to 850°C.