| 摘要 |
PURPOSE: A nonvolatile semiconductor memory device and method of manufacturing the same is provided to prevent a deterioration of reliability. CONSTITUTION: A memory cell transistor formed in an element formation region in a semiconductor substrate(2) has a gate electrode structure including a source/drain diffused layer(9), a gate insulating film(5) formed on the element formation region, a floating gate(6), a gate-to-gate insulating film(7), and a control gate(8). A barrier insulating film(12) for suppressing excess etching is formed above the semiconductor substrate excluding the vicinity of the gate electrode structure.
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