发明名称 |
LINEAR SAMPLING SWITCH |
摘要 |
A sampling circuit is constructed with a p-channel and an n-channel field effect transistor (FET). A source node of the p-channel FET (42) is coupled to a drain node of the n-channel FET (40) and a drain node of the p-channel FET (42) is coupled to a source node of the n-channel FET (40). A sampling clock is coupled to the gate node of each FET. A first side of the linear sampling circuit is connected to an analog or RF signal source and a far side of the linear sampling circuit is connected to a holding capacitor (44). The n-channel FET has an n-channel width. A p-channel FET has a p-channel width. The p-channel width is larger than the n-channel width in order to increase the linearity of the on-resistance of the resulting switch.
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申请公布号 |
WO0042707(A1) |
申请公布日期 |
2000.07.20 |
申请号 |
WO2000US00666 |
申请日期 |
2000.01.11 |
申请人 |
QUALCOMM INCORPORATED;BAZARJANI, SEYFOLLAH, S. |
发明人 |
BAZARJANI, SEYFOLLAH, S. |
分类号 |
G11C27/02;H03K17/00;H03K17/14;H03K17/16;H03K17/687;(IPC1-7):H03K17/687 |
主分类号 |
G11C27/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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