发明名称 LINEAR SAMPLING SWITCH
摘要 A sampling circuit is constructed with a p-channel and an n-channel field effect transistor (FET). A source node of the p-channel FET (42) is coupled to a drain node of the n-channel FET (40) and a drain node of the p-channel FET (42) is coupled to a source node of the n-channel FET (40). A sampling clock is coupled to the gate node of each FET. A first side of the linear sampling circuit is connected to an analog or RF signal source and a far side of the linear sampling circuit is connected to a holding capacitor (44). The n-channel FET has an n-channel width. A p-channel FET has a p-channel width. The p-channel width is larger than the n-channel width in order to increase the linearity of the on-resistance of the resulting switch.
申请公布号 WO0042707(A1) 申请公布日期 2000.07.20
申请号 WO2000US00666 申请日期 2000.01.11
申请人 QUALCOMM INCORPORATED;BAZARJANI, SEYFOLLAH, S. 发明人 BAZARJANI, SEYFOLLAH, S.
分类号 G11C27/02;H03K17/00;H03K17/14;H03K17/16;H03K17/687;(IPC1-7):H03K17/687 主分类号 G11C27/02
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