Substrate platform for a semiconductor substrate during rapid high temperature processing and method of supporting a substrate

摘要

A platform for processing a substrate includes a first member and a second member. The first member includes a first support surface for supporting the substrate during processing. The second member includes a second support surface, which supports the first member thereon, and a third support surface, which is adapted to be supported in a processing chamber. The first and second members are releasably coupled together in a manner which permits unrestrained relative thermal expansion of the two members and also of the substrate. The platform is suitable for use in a processing reactor which includes a heater housing and an outer reactor housing. The heater housing encloses a heater assembly and provides a surface for supporting the platform during processing. The reactor also includes a gas injector for injecting at least one processing gas into the processing chamber for deposition on the substrate.