| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor device having an STI(shallow groove buried element isolation) structure, which can generate no void when an insulating film is buried in grooves formed in a semiconductor substrate, and prevent the characteristics of an element, which is formed on the substrate, from being deteriorated. SOLUTION: The manufacture wherein grooves 102 are formed in the surface of a semiconductor substrate 101 and an insulating film formed by decomposing TEOS gas is buried in the grooves 102 to form an STI structure is conducted. In this case, an insulating film filling process comprises a first growth process for growing a first tetraethoxysilane un-doped silicate glass(TEOSNSG) film 114 formed by being subjected to vapor thermal decomposition the TEOS gas and a second growth process for growing a second TEOSNSG film 115 formed by being subjected to surface thermal decomposition the TEOS gas on the surface of the substrate 101. With a uniform film, which does not depend upon the surface profile of the substrate 101, formed of the film 114, the aspect ratio of the grooves 102 is relaxed and the interiors of the grooves 102 are filled with the film 115, whereby it becomes possible to bury the insulating film in the grooves at a high efficiency without generating voids.
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