| 发明名称 |
Method and circuitry for storing discrete amounts of charge in a single memory element |
| 摘要 |
A method and circuitry for programming a memory cell to one of at least three amounts of charge. The amount of charge placed in the memory cell is increased by increasing the voltage level of a programming pulse applied to the memory cell.
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| 申请公布号 |
US6091618(A) |
申请公布日期 |
2000.07.18 |
| 申请号 |
US19970910761 |
申请日期 |
1997.08.13 |
| 申请人 |
INTEL CORPORATION |
发明人 |
FAZIO, ALBERT;ATWOOD, GREGORY E.;MI, JAMES Q. |
| 分类号 |
G11C17/00;G11C11/56;G11C16/02;G11C27/00;(IPC1-7):G11C13/00 |
主分类号 |
G11C17/00 |
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