发明名称 |
Quantum well laser with a composition-graded interface at the quantum well |
摘要 |
Quantum well lasers are herein made with purposely-graded interfaces which control the interdiffusion of atoms during high temperature processing. The result is a predictably-graded, large interface between the quantum well and the waveguide layers to either side thereof. The process is highly controllable and produces unique structures which exhibit surprisingly high power in a repeatable manner.
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申请公布号 |
US6091752(A) |
申请公布日期 |
2000.07.18 |
申请号 |
US19980040052 |
申请日期 |
1998.03.17 |
申请人 |
OPTO POWER CORPORATION |
发明人 |
HE, XIAOQUANG;SRINIVASAN, SWAMINATHAN |
分类号 |
H01S5/34;(IPC1-7):H01S3/19 |
主分类号 |
H01S5/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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