发明名称 Quantum well laser with a composition-graded interface at the quantum well
摘要 Quantum well lasers are herein made with purposely-graded interfaces which control the interdiffusion of atoms during high temperature processing. The result is a predictably-graded, large interface between the quantum well and the waveguide layers to either side thereof. The process is highly controllable and produces unique structures which exhibit surprisingly high power in a repeatable manner.
申请公布号 US6091752(A) 申请公布日期 2000.07.18
申请号 US19980040052 申请日期 1998.03.17
申请人 OPTO POWER CORPORATION 发明人 HE, XIAOQUANG;SRINIVASAN, SWAMINATHAN
分类号 H01S5/34;(IPC1-7):H01S3/19 主分类号 H01S5/34
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