| 摘要 |
PURPOSE: A method for fabricating a CMOS transistor is provided to prevent a latch-up generation current effectively by forming a contact, connecting a silicon substrate and a ground portion, at a field oxide film. CONSTITUTION: In a method for fabricating a CMOS transistor, a gate oxide film(23) and a first polysilicon film(24) are sequentially formed on a semiconductor substrate(21) at which a field oxide film(22) is formed. A contact hole is formed in the field oxide film(22) by selectively etching the first polysilicon film(24), the gate oxide film(23) and the field oxide film(22) so as to expose the substrate(21). A second polysilicon film having a thickness of 2500 to 3500 Angstroms is deposited on an entire surface of a resultant structure so as to fill up the contact hole(28) sufficiently. A contact(29A) is formed in the contact hole(28) by etching the second polysilicon film until the first polysilicon film(24) is exposed. A gate electrode is formed by selectively etching the first polysilicon film(24) and the gate oxide film(23).
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