| 摘要 |
PURPOSE: A field emission cathode and a method for manufacturing the same are provided to compose a field emission cathode as a gate electrode with a submicron cathode tip and a submicron aperture. CONSTITUTION: A cathode electrode(2) and the first insulating layer(4) are laminated on a substrate(1). The first insulating layer(4) is etched by performing a photo-etching method. An isolation layer is formed by rotating the substrate(1). A surface of a shield layer is sealed by forming a cathode chip(3) and the shield layer. The isolation layer is lifted off by performing a chemical etching method. The second insulating layer(4') is formed by a chemical vapor deposition method or a sputtering method. A gate electrode(5) is formed thereon. A gate electron hole(6) is formed by etching the second insulating layer.
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