METHOD FOR FORMING A GATE ELECTRODE OF A SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a gate electrode of a semiconductor device is provided to restrain the abnormal oxidation phenomenon of a gate by growing the oxidation layer according to the rapid heat oxidation process. CONSTITUTION: A gate insulation layer is formed on the semiconductor substrate. A polisilicon layer is formed on the gate insulation layer. A conductive layer comprising a metal element is formed on the overall structure. The conductive layer and the polisilicon layer is selectively etched to pattern the gate electrode. An oxidation layer is formed along the surface of the overall structure by accomplishing a rapid heat oxidation process. According to the method for forming a gate electrode of a semiconductor device, the abnormal oxidation phenomenon of a gate is restrained by growing the oxidation layer according to the rapid heat oxidation process.