METHOD FOR FORMING METAL INTERLAYER DIELECTRIC OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a metal interlayer dielectric of a semiconductor device is provided to prevent bowing phenomena by improving a coating process and a curing process of a SOG layer. CONSTITUTION: A method for forming a metal interlayer dielectric of a semiconductor device comprises the following steps. An interlayer dielectric(12) is formed on a substrate formed with various elements to form a semiconductor device(11). A multitude of metal wiring is wired on the interlayer dielectric. A first insulating layer(14) is formed on a whole structure. A SOG(Spin-On Glass) material is coated. A SOG layer(15) is formed on the first insulating layer by curing the coated SOG material under a pressure. A second insulating layer(16) is formed on the SOG layer.